TO293BN-RXYZ 1310 nm to-can package for 10 gb/s applications data sheet description the TO293BN-RXYZ is a hermetically-sealed device with a photo diode for optical output monitoring. it incorporates 1310 nm single mode edge-emitting laser diode chips for use in uncooled applications up to 10.7 gb/s. the laser is mounted into a transistor outline (to) header and is hermetically sealed with a lens cap specifi c to it. the laser design is buried hetero structure with multi-quantum well (mqw) active layers and distributed-feedback (dfb) grating layer. all laser chips come from wafers that have been certifi ed using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, cw and dynamic tests. features ? low threshold current ? high bandwidth ? qualifi ed as per intent of telcordia gr-468 ? operating temperature -40 c to 85 c applications ? supports performance up to 10.7 gb/s bit rate ? lr1 sonet/sdh oc192/stm-64 ? 10 gb/s gigabit ethernet ? 10 gb/s fiber channel
2 electro-optical characteristics for TO293BN-RXYZ 1310 nm dfb to-can parameters tested at 25 c, data for extended tempera ture range is based on product characterization results for reference only. parameter symbol test conditions min. typ. max. unit threshold current i th cw, t = 25 c 812ma t = 85 c 25 30 slope effi ciency cw, t = 25 c 0.2 0.25 w/a t = 85 c 0.12 0.18 optical output power p f i f = 30 ma 3.2 5.0 mw forward voltage v f i f = 30 ma 1.3 1.6 v i f = 30 ma with matching r 1.9 3 series resistance r without matching r 5 with matching r 12 30 kink current i knk i th to 100 ma 70 ma wavelength cw, i f = 30 ma 1290 1310 1330 nm side mode suppression ratio smsr cw, i f = 30 ma 30 40 db monitor output current i m i f = 30 ma 100 1000 a monitor dark current i d v rp = 5 v, not in black box 100 na product characteristics of chip-on-carrier or package at 25 c parameter symbol test conditions min. typ. max. unit wavelength/temperature coeffi cient d/dt t = C5 c to 85 c 0.09 nm/c relative intensity noise rin i f = 30ma, 50 mhz C 12 ghz C140 db/hz bandwidth bw i th + 36 ma 9 ghz rise time r unfi ltered 20 C 80%; er = 5 db 35 ps fall time f unfi ltered; 80 C 20%; er = 5 db 45 ps monitor capacitance c v rp = 5v, f = 1 mhz 5 7 pf notes: p f = light from the to i f = forward current v f = forward voltage v rp = reversed bias for photo diode absolute maximum ratings stresses in excess of the absolute maximum ratings can cause permanent damage to the device. these are absolute stress ratings only. functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet. exposure to absolute maximum ratings for extended periods can adversely aff ect device reliability. parameter unit min. max. forward current ma 150 front power mw 20 reverse voltage (laser diode) v 2 reverse voltage (photo diode) v 20 forward current (photo diode) ma 10 operating temperature c C40 85 storage temperature c C40 100 storage relative humidity % 85
3 handling precautions ? radiation from the laser can be dangerous; avoid direct eye contact with the laser. use an infrared camera or ir viewer to observe the laser light. ? semiconductor lasers are sensitive to electrostatic damage. pack the module with esd-proof material for carry and shipment. carefully ground the working environment, such as working bench, soldering iron, and the workers. electrical and optical overstress (esd/eos) information results of esd testing indicate that this is a class i laser with an esd withstand voltage of 500 v. switching transients can cause electrical overstress (eos) damage in a chip. eos may result from improper esd handling, improper power sequencing, a faulty power supply or an intermittent connection. proper turn-on sequence: 1. all ground connections 2. most negative supply 3. most positive supply 4. all remaining connections reverse the order to turn off .
4 dimensions (unit: mm) pin assignment pin no. standard type isolated mpd type 1 ld anode ld anode 2 no connection pd anode 3 pd cathode pd cathode 4 ld cathode ld cathode 5 case (gnd) case (gnd) standard type isolated mpd type bottom view to293bn-ehaz to293bn-ecaz to293bn-ebaz to293bn-efaz
5 dimensions (unit: mm) pin assignment pin no. standard note 1 ld anode 2 ld cathode 3 pd cathode pd anode connects to the case (gnd) 4 case (gnd) bottom view to293bn-ehax to293bn-efax to293bn-ebax to293bn-ecax
qualifi cation information laser diodes have passed all qualifi cation requirements as specifi ed by telcordia gr-468. ordering information TO293BN-RXYZ r: temperature range e: C5 c to 75 c n: C5 c to 85 c i: C40 c to 85 c x: type of cap lens b: 2-mm ball lens cap with 6.7-mm focal point c: aspherical lens cap with 7.5-mm focal point f: 2-mm high index ball lens cap with 5.8-mm focal point h: aspherical lens cap with 10.1-mm focal point performance of the laser will depend on a number of factors, including the customers' rf and thermal design, fi ber length, bit rate, and temperature range. for particular applications, contact avago. for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. cyoptics and the cyoptics logo are trademarks of cyoptics, inc. in the united states and other countries. data subject to change. copyright ? 2005C2015 cyoptics, inc. all rights reserved. av02-4583en C august 14, 2015 telcordia technologies is a trademark of telcordia technologies, inc. iec is a registered trademark of the international electrotechnical commission. laser safety all versions of these laser chips are classifi ed as class iii per cdrh, 21 cfr 1040 laser safety requirements. all versions are classifi ed as class 1m laser chips consistent with iec? 60825-2: 2001. this product complies with 21 cfr 1040.10 and 1040.11. y: type of lead a: cathode mpd (anode gnd) c: anode mpd (cathode gnd) e: isolated mpd z: type of header and matching resistor 1: 5-pin header, with matching resistor 2: 4-pin header, with 18-ohm matching resistor 3: 4-pin header, with 9-ohm matching resistor x: 4-pin header, without matching resistor z: 5-pin header, without matching resistor
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